ON Semiconductor NGTB35N65FL2WG IGBT, 70 A 650 V, 3-Pin TO-247, Through Hole
- RS Stock No.:
- 163-0258
- Mfr. Part No.:
- NGTB35N65FL2WG
- Brand:
- onsemi
On back order for despatch 25/10/2024, delivery within 10 working days from despatch date.
Added
Price (ex. GST) Each (In a Tube of 30)
$6.635
(exc. GST)
$7.299
(inc. GST)
| Units | Per unit | Per Tube* |
| 30 - 30 | $6.635 | $199.05 |
| 60 - 90 | $6.469 | $194.07 |
| 120 + | $6.37 | $191.10 |
| *price indicative | ||
Alternative
This product is not currently available. Here is our alternative recommendation.
- RS Stock No.:
- 163-0258
- Mfr. Part No.:
- NGTB35N65FL2WG
- Brand:
- onsemi
Technical data sheets
Legislation and Compliance
- COO (Country of Origin):
- CN
Product Details
IGBT Discretes, ON Semiconductor
Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
IGBT Discretes, ON Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifications
Attribute | Value |
|---|---|
| Maximum Continuous Collector Current | 70 A |
| Maximum Collector Emitter Voltage | 650 V |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Power Dissipation | 300 W |
| Package Type | TO-247 |
| Mounting Type | Through Hole |
| Channel Type | N |
| Pin Count | 3 |
| Switching Speed | 1MHz |
| Transistor Configuration | Single |
| Dimensions | 16.26 x 5.3 x 21.08mm |
| Maximum Operating Temperature | +175 °C |
| Minimum Operating Temperature | -55 °C |