- RS Stock No.:
- 162-3287
- Mfr. Part No.:
- IKQ50N120CH3XKSA1
- Brand:
- Infineon
Discontinued product
- RS Stock No.:
- 162-3287
- Mfr. Part No.:
- IKQ50N120CH3XKSA1
- Brand:
- Infineon
Technical data sheets
Legislation and Compliance
Product Details
Responding to the market requirement to accommodate ever increasing amounts of silicon in smaller, space saving packages, Infineon introduces the new package TO-247PLUS for 1200V IGBT. Higher current capability, improved thermal behaviour. The TO-247PLUS has the same outer dimensions as the industry standard TO-247, but due to the absence of the screw hole, allows up to 75A in 1200V co-packed with full rated 75A diode.
High power density – up to 75 A 1200 V IGBT co-packed with 75 A diode in TO-247 footprint
20% lower R th(jh) compared to TO-247 3 pin
Extended collector-emitter pin creepage of 4.25 mm
Extended clip creepage due to fully encapsulated front side of the package
Higher system power density – I c increase keeping the same system thermal performance
Lower thermal resistance R th(jh) and improved by ∼15% heat dissipation capability of TO-247PLUS vs TO-247
Higher reliability, extended lifetime of the device
20% lower R th(jh) compared to TO-247 3 pin
Extended collector-emitter pin creepage of 4.25 mm
Extended clip creepage due to fully encapsulated front side of the package
Higher system power density – I c increase keeping the same system thermal performance
Lower thermal resistance R th(jh) and improved by ∼15% heat dissipation capability of TO-247PLUS vs TO-247
Higher reliability, extended lifetime of the device
Specifications
Attribute | Value |
---|---|
Maximum Continuous Collector Current | 100 A |
Maximum Collector Emitter Voltage | 1200 V |
Maximum Gate Emitter Voltage | ±30V |
Maximum Power Dissipation | 652 W |
Number of Transistors | 1 |
Package Type | TO-247 |
Mounting Type | Through Hole |
Channel Type | P |
Pin Count | 3 |
Switching Speed | 60kHz |
Transistor Configuration | Single |
Dimensions | 15.9 x 5.1 x 21.1mm |
Maximum Operating Temperature | +175 °C |
Gate Capacitance | 3269pF |
Minimum Operating Temperature | -40 °C |
Energy Rating | 4.9mJ |