Infineon IGW50N65H5FKSA1 IGBT, 50 A 650 V, 3-Pin TO-247, Through Hole

RS Stock No.:: 145-9169
Mfr. Part No.:: IGW50N65H5FKSA1
Brand:: Infineon

Infineon IGW50N65H5FKSA1 IGBT, 50 A 650 V, 3-Pin TO-247, Through Hole

This image is representative of the product range

270 In Global stock for delivery within 10 working day(s)

Added

Price (ex. GST) Each (In a Tube of 30)

$5.568

(exc. GST)

$6.125

(inc. GST)

Units	Per unit	Per Tube*
30 - 120	$5.568	$167.04
150 +	$5.011	$150.33
*price indicative

RS Stock No.:: 145-9169
Mfr. Part No.:: IGW50N65H5FKSA1
Brand:: Infineon

Technical data sheets

Legislation and Compliance

COO (Country of Origin):: MY

Product Details

Infineon TrenchStop IGBT Transistors, 600 and 650V

A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.

• Collector-emitter voltage range 600 to 650V
• Very low VCEsat
• Low turn-off losses
• Short tail current
• Low EMI
• Maximum junction temperature 175°C

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

IGBT Discretes & Modules, Infineon

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Specifications

Attribute	Value
Maximum Continuous Collector Current	50 A
Maximum Collector Emitter Voltage	650 V
Maximum Gate Emitter Voltage	±20V
Maximum Power Dissipation	305 W
Package Type	TO-247
Mounting Type	Through Hole
Channel Type	N
Pin Count	3
Transistor Configuration	Single
Dimensions	16.13 x 5.21 x 21.1mm
Energy Rating	0.7mJ
Minimum Operating Temperature	-40 °C
Maximum Operating Temperature	+175 °C
Gate Capacitance	3000pF