onsemi FGA15N120ANTDTU_F109 IGBT, 24 A 1200 V, 3-Pin TO-3PN, Through Hole
- RS Stock No.:
- 145-5381
- Mfr. Part No.:
- FGA15N120ANTDTU_F109
- Brand:
- onsemi
Available for back order.
Added
Price (ex. GST) Each (In a Tube of 30)
$3.161
(exc. GST)
$3.477
(inc. GST)
| Units | Per unit | Per Tube* |
| 30 + | $3.161 | $94.83 |
| *price indicative | ||
- RS Stock No.:
- 145-5381
- Mfr. Part No.:
- FGA15N120ANTDTU_F109
- Brand:
- onsemi
Technical data sheets
Legislation and Compliance
- COO (Country of Origin):
- MY
Product Details
Discrete IGBTs, 1000V and over, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifications
Attribute | Value |
|---|---|
| Maximum Continuous Collector Current | 24 A |
| Maximum Collector Emitter Voltage | 1200 V |
| Maximum Gate Emitter Voltage | ±20V |
| Package Type | TO-3PN |
| Mounting Type | Through Hole |
| Channel Type | N |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Dimensions | 15.8 x 5 x 18.9mm |
| Minimum Operating Temperature | -55 °C |
| Maximum Operating Temperature | +150 °C |