ON Semiconductor FGAF20N60SMD IGBT, 40 A 600 V, 3-Pin TO-3PF

Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

Discrete IGBTs, Fairchild Semiconductor

IGBT Discretes & Modules, Fairchild Semiconductor

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Specifications
Attribute Value
Maximum Continuous Collector Current 40 A
Maximum Collector Emitter Voltage 600 V
Maximum Gate Emitter Voltage ±20V
Maximum Power Dissipation 75 W
Package Type TO-3PF
Mounting Type Through Hole
Channel Type N
Pin Count 3
Switching Speed 1MHz
Transistor Configuration Single
Dimensions 15.7 x 3.2 x 26.7mm
Minimum Operating Temperature -55 °C
Maximum Operating Temperature +175 °C
240 In stock for delivery within 7 working day(s) (Global Stock)
Price (ex. GST) Each (In a Tube of 30)
$ 4.48
(exc. GST)
$ 4.93
(inc. GST)
units
Per unit
Per Tube*
30 +
$4.48
$134.40
*price indicative
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