Infineon IGW50N60TPXKSA1 IGBT, 80 A 600 V, 3-Pin TO-247, Through Hole

  • RS Stock No. 144-1204
  • Mfr. Part No. IGW50N60TPXKSA1
  • Manufacturer Infineon
Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

Infineon TrenchStop IGBT Transistors, 600 and 650V

A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.

• Collector-emitter voltage range 600 to 650V
• Very low VCEsat
• Low turn-off losses
• Short tail current
• Low EMI
• Maximum junction temperature 175°C

IGBT Discretes & Modules, Infineon

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Specifications
Attribute Value
Maximum Continuous Collector Current 80 A
Maximum Collector Emitter Voltage 600 V
Maximum Gate Emitter Voltage ±20V
Number of Transistors 1
Maximum Power Dissipation 319.2 W
Package Type TO-247
Mounting Type Through Hole
Channel Type N
Pin Count 3
Switching Speed 30kHz
Transistor Configuration Single
Dimensions 16.13 x 5.21 x 21.1mm
Gate Capacitance 1950pF
Minimum Operating Temperature -40 °C
Energy Rating 2.38mJ
Maximum Operating Temperature +175 °C
1820 In stock for delivery within 7 working day(s) (Global Stock)
Price (ex. GST) Each (In a Pack of 10)
$ 5.00
(exc. GST)
$ 5.50
(inc. GST)
units
Per unit
Per Pack*
10 +
$5.00
$50.00
*price indicative
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