Infineon IKW50N65ES5XKSA1 IGBT, 80 A 650 V, 3-Pin TO-247, Through Hole
- RS Stock No.:
- 133-9879
- Mfr. Part No.:
- IKW50N65ES5XKSA1
- Brand:
- Infineon
301 In Global stock for delivery within 10 working day(s)
Added
Price (ex. GST) Each
$9.86
(exc. GST)
$10.85
(inc. GST)
| Units | Per unit |
| 1 - 59 | $9.86 |
| 60 - 119 | $9.61 |
| 120 + | $9.47 |
- RS Stock No.:
- 133-9879
- Mfr. Part No.:
- IKW50N65ES5XKSA1
- Brand:
- Infineon
Legislation and Compliance
- COO (Country of Origin):
- CN
Product Details
Infineon TrenchStop IGBT Transistors, 600 and 650V
A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.
• Collector-emitter voltage range 600 to 650V
• Very low VCEsat
• Low turn-off losses
• Short tail current
• Low EMI
• Maximum junction temperature 175°C
• Very low VCEsat
• Low turn-off losses
• Short tail current
• Low EMI
• Maximum junction temperature 175°C
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifications
Attribute | Value |
|---|---|
| Maximum Continuous Collector Current | 80 A |
| Maximum Collector Emitter Voltage | 650 V |
| Maximum Gate Emitter Voltage | ±20V |
| Number of Transistors | 1 |
| Maximum Power Dissipation | 274 W |
| Package Type | TO-247 |
| Mounting Type | Through Hole |
| Channel Type | N |
| Pin Count | 3 |
| Switching Speed | 30kHz |
| Transistor Configuration | Single |
| Dimensions | 16.13 x 5.21 x 21.1mm |
| Minimum Operating Temperature | -40 °C |
| Energy Rating | 1.78mJ |
| Maximum Operating Temperature | +175 °C |
| Gate Capacitance | 3100pF |
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