IXYS IXXK110N65B4H1 IGBT, 570 A 650 V, 3-Pin TO-264, Through Hole
- RS Stock No.:
- 125-8051
- Mfr. Part No.:
- IXXK110N65B4H1
- Brand:
- IXYS
On back order for despatch 20/05/2024, delivery within 10 working days from despatch date.
Added
Price (ex. GST) Each
$28.19
(exc. GST)
$31.01
(inc. GST)
| Units | Per unit |
| 1 - 6 | $28.19 |
| 7 - 12 | $27.85 |
| 13 + | $27.17 |
- RS Stock No.:
- 125-8051
- Mfr. Part No.:
- IXXK110N65B4H1
- Brand:
- IXYS
Legislation and Compliance
Product Details
IGBT Discretes, IXYS
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifications
Attribute | Value |
|---|---|
| Maximum Continuous Collector Current | 570 A |
| Maximum Collector Emitter Voltage | 650 V |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Power Dissipation | 880 W |
| Number of Transistors | 1 |
| Package Type | TO-264 |
| Mounting Type | Through Hole |
| Channel Type | N |
| Pin Count | 3 |
| Switching Speed | 10 → 30kHz |
| Transistor Configuration | Single |
| Dimensions | 20.3 x 5.3 x 26.6mm |
| Minimum Operating Temperature | -55 °C |
| Maximum Operating Temperature | +175 °C |
| Energy Rating | 3mJ |