Infineon IKW50N60H3FKSA1 IGBT, 100 A 600 V, 3-Pin TO-247

  • RS Stock No. 124-8810
  • Mfr. Part No. IKW50N60H3FKSA1
  • Manufacturer Infineon
Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): CN
Product Details

Infineon TrenchStop IGBT Transistors, 600 and 650V

A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.

• Collector-emitter voltage range 600 to 650V
• Very low VCEsat
• Low turn-off losses
• Short tail current
• Low EMI
• Maximum junction temperature 175°C

IGBT Discretes & Modules, Infineon

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Specifications
Attribute Value
Maximum Continuous Collector Current 100 A
Maximum Collector Emitter Voltage 600 V
Maximum Gate Emitter Voltage ±20V
Maximum Power Dissipation 333 W
Package Type TO-247
Mounting Type Through Hole
Channel Type N
Pin Count 3
Transistor Configuration Single
Length 16.13mm
Width 5.21mm
Height 21.1mm
Dimensions 16.13 x 5.21 x 21.1mm
Maximum Operating Temperature +175 °C
Energy Rating 2.55mJ
Gate Capacitance 2960pF
Minimum Operating Temperature -40 °C
750 In stock for delivery within 5 working day(s)
Price (ex. GST) Each (In a Tube of 30)
$ 6.647
(exc. GST)
$ 7.312
(inc. GST)
units
Per unit
Per Tube*
30 - 30
$6.647
$199.41
60 - 120
$6.41
$192.30
150 - 270
$6.196
$185.88
300 +
$6.002
$180.06
*price indicative
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