onsemi NGTB30N120LWG IGBT, 60 A 1200 V, 3-Pin TO-247, Through Hole

RS Stock No.:: 124-5386
Mfr. Part No.:: NGTB30N120LWG
Brand:: onsemi

onsemi NGTB30N120LWG IGBT, 60 A 1200 V, 3-Pin TO-247, Through Hole

Available for back order.

Added

Price (ex. GST) Each (In a Tube of 30)

$7.997

(exc. GST)

$8.797

(inc. GST)

Units	Per unit	Per Tube*
30 - 30	$7.997	$239.91
60 - 120	$7.269	$218.07
150 - 270	$6.664	$199.92
300 - 570	$6.151	$184.53
600 +	$5.711	$171.33
*price indicative

RS Stock No.:: 124-5386
Mfr. Part No.:: NGTB30N120LWG
Brand:: onsemi

Technical data sheets

Legislation and Compliance

COO (Country of Origin):: CN

Product Details

IGBT Discretes, ON Semiconductor

Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.

IGBT Discretes, ON Semiconductor

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Specifications

Attribute	Value
Maximum Continuous Collector Current	60 A
Maximum Collector Emitter Voltage	1200 V
Maximum Gate Emitter Voltage	±20V
Number of Transistors	1
Maximum Power Dissipation	260 W
Package Type	TO-247
Mounting Type	Through Hole
Channel Type	N
Pin Count	3
Transistor Configuration	Single
Dimensions	16.26 x 5.3 x 21.08mm
Maximum Operating Temperature	+150 °C
Minimum Operating Temperature	-55 °C

onsemi NGTB30N120LWG IGBT, 60 A 1200 V, 3-Pin TO-247, Through Hole

Technical data sheets

Legislation and Compliance

Product Details

IGBT Discretes, ON Semiconductor

Specifications

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