ON Semiconductor FGY75N60SMD IGBT, 150 A 600 V, 3-Pin TO-247

Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): CN
Product Details

Discrete IGBTs, Fairchild Semiconductor

IGBT Discretes & Modules, Fairchild Semiconductor

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Specifications
Attribute Value
Maximum Continuous Collector Current 150 A
Maximum Collector Emitter Voltage 600 V
Maximum Gate Emitter Voltage ±20V
Maximum Power Dissipation 750 W
Package Type TO-247
Mounting Type Through Hole
Channel Type N
Pin Count 3
Transistor Configuration Single
Length 15.87mm
Width 4.82mm
Height 20.32mm
Dimensions 15.87 x 4.82 x 20.32mm
Minimum Operating Temperature -55 °C
Maximum Operating Temperature +175 °C
810 In stock for delivery within 5 working day(s)
Price (ex. GST) Each (In a Tube of 30)
$ 7.189
(exc. GST)
$ 7.908
(inc. GST)
units
Per unit
Per Tube*
30 - 30
$7.189
$215.67
60 - 120
$6.889
$206.67
150 - 270
$6.624
$198.72
300 - 570
$6.388
$191.64
600 +
$6.175
$185.25
*price indicative