Infineon IGW75N60H3FKSA1 IGBT, 75 A 600 V, 3-Pin TO-247

  • RS Stock No. 110-7445
  • Mfr. Part No. IGW75N60H3FKSA1
  • Manufacturer Infineon
Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

Infineon TrenchStop IGBT Transistors, 600 and 650V

A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.

• Collector-emitter voltage range 600 to 650V
• Very low VCEsat
• Low turn-off losses
• Short tail current
• Low EMI
• Maximum junction temperature 175°C

IGBT Discretes & Modules, Infineon

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Specifications
Attribute Value
Maximum Continuous Collector Current 75 A
Maximum Collector Emitter Voltage 600 V
Maximum Gate Emitter Voltage ±20V
Maximum Power Dissipation 428 W
Package Type TO-247
Mounting Type Through Hole
Channel Type N
Pin Count 3
Transistor Configuration Single
Length 16.13mm
Width 5.21mm
Height 21.1mm
Dimensions 16.13 x 5.21 x 21.1mm
Energy Rating 6.2mJ
Maximum Operating Temperature +175 °C
Minimum Operating Temperature -40 °C
Gate Capacitance 4620pF
1794 In stock for delivery within 5 working day(s) (Global Stock)
Price (ex. GST) Each (In a Pack of 2)
$ 8.11
(exc. GST)
$ 8.92
(inc. GST)
units
Per unit
Per Pack*
2 - 2
$8.11
$16.22
4 - 18
$8.025
$16.05
20 - 38
$7.945
$15.89
40 - 98
$7.705
$15.41
100 +
$7.475
$14.95
*price indicative
Packaging Options:
Related Products
Optimised IGBTs designed for medium frequency applications with ...
Description:
Optimised IGBTs designed for medium frequency applications with fast response and provide the user with the highest efficiency available Utilising FRED diodes optimised to provide the best performance with IGBT's.
Isolated Gate Bipolar Transistors (IGBT) from Infineon provide ...
Description:
Isolated Gate Bipolar Transistors (IGBT) from Infineon provide the iser with a comprehensive range of options to ensure your appplication is covered High effiency ratings enable this range of IGBTs to be used in a wide variety of applications and ...