IXYS IXGH40N120B2D1 IGBT, 75 A 1200 V, 3-Pin TO-247, Through Hole

RS Stock No.:: 192-988
Mfr. Part No.:: IXGH40N120B2D1
Brand:: IXYS

IXYS IXGH40N120B2D1 IGBT, 75 A 1200 V, 3-Pin TO-247, Through Hole

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18 In Global stock for delivery within 10 working day(s)

Added

Price (ex. GST) Each

$30.80

(exc. GST)

$33.88

(inc. GST)

Units	Per unit
1 - 7	$30.80
8 - 14	$30.40
15 +	$29.59

RS Stock No.:: 192-988
Mfr. Part No.:: IXGH40N120B2D1
Brand:: IXYS

Technical data sheets

Legislation and Compliance

Product Details

IGBT Discretes, IXYS

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

IGBT Discretes & Modules, IXYS

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Specifications

Attribute	Value
Maximum Continuous Collector Current	75 A
Maximum Collector Emitter Voltage	1200 V
Maximum Gate Emitter Voltage	±20V
Package Type	TO-247
Mounting Type	Through Hole
Channel Type	N
Pin Count	3
Transistor Configuration	Single
Dimensions	16.26 x 5.3 x 21.46mm
Minimum Operating Temperature	-55 °C
Maximum Operating Temperature	+150 °C