- RS Stock No.:
- 192-641
- Mfr. Part No.:
- IXGH30N120B3D1
- Brand:
- IXYS
241 In Global stock for delivery within 10 working day(s)
Added
Price (ex. GST) Each
$17.23
(exc. GST)
$18.95
(inc. GST)
Units | Per unit |
1 - 7 | $17.23 |
8 - 14 | $17.22 |
15 + | $16.57 |
- RS Stock No.:
- 192-641
- Mfr. Part No.:
- IXGH30N120B3D1
- Brand:
- IXYS
Technical data sheets
Legislation and Compliance
Product Details
IGBT Discretes, IXYS
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifications
Attribute | Value |
---|---|
Maximum Continuous Collector Current | 50 A |
Maximum Collector Emitter Voltage | 1200 V |
Package Type | TO-247 |
Mounting Type | Through Hole |
Pin Count | 3 |
Transistor Configuration | Single |
Minimum Operating Temperature | -55 °C |
Maximum Operating Temperature | +150 °C |
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