Semikron SKM75GB12V, SEMITRANS2 Dual Half Bridge IGBT Module, 114 A max, 1200 V, Panel Mount

  • RS Stock No. 905-6156
  • Mfr. Part No. SKM75GB12V
  • Manufacturer Semikron
Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): SK
Product Details

Dual IGBT Modules

A range of SEMITOP® IGBT modules from Semikron incorporating two series-connected (half bridge) IGBT devices. The modules are available in a wide range of voltage and current ratings and are suitable for a variety of power switching applications such as AC inverter motor drives and Uninterruptible Power Supplies.

Compact SEMITOP® package
Suitable for switching frequencies up to 12kHz
Insulated copper baseplate using Direct Bonded Copper technology

Supplied with

Mounting hardware

IGBT Modules, Semikron

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Specifications
Attribute Value
Transistor Configuration Series
Configuration Dual Half Bridge
Maximum Continuous Collector Current 114 A
Maximum Collector Emitter Voltage 1200 V
Maximum Gate Emitter Voltage ±20V
Channel Type N
Mounting Type Panel Mount
Package Type SEMITRANS2
Pin Count 7
Dimensions 94 x 34 x 30.1mm
Height 30.1mm
Length 94mm
Maximum Operating Temperature +175 °C
Width 34mm
Minimum Operating Temperature -40 °C
28 In stock for delivery within 5 working day(s)
Price (ex. GST) Each
$ 117.26
(exc. GST)
$ 128.99
(inc. GST)
units
Per unit
1 - 9
$117.26
10 - 49
$111.44
50 - 99
$95.99
100 - 249
$85.81
250 +
$75.16
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The Insulated Gate Bipolar Transistor or IGBT is ...
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The Insulated Gate Bipolar Transistor or IGBT is ...
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