Fuji Electric 6MBP50VBA-120-50, P 626 3 Phase Smart Power Module, 50 A max, 1200 V, PCB Mount

  • RS Stock No. 877-7307
  • Mfr. Part No. 6MBP50VBA-120-50
  • Manufacturer Fuji Electric
Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

IPM (Intelligent Power Module) IGBT, V-Series, Fuji Electric

The Fuji Electric V-series Intelligent Power Modules (IPM) come equipped with drive, control and protection IGBT circuits. They are easy to implement in power control applications for AC servos, air conditioning equipment and elevators. Built-in protection functions optimize and increase the lifetime of IPM IGBTs thereby safeguarding high system reliability. The IPMs come equipped with protection against over-current, short circuit, control power voltage drop and over-heating, and include output alarm signals.

6MBP... Without Brake-Chopper
7MBP... With Brake-Chopper

IGBT Discretes & Modules, Fuji Electric

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Specifications
Attribute Value
Transistor Configuration 3 Phase
Configuration 3 Phase
Maximum Continuous Collector Current 50 A
Maximum Collector Emitter Voltage 1200 V
Channel Type N
Mounting Type PCB Mount
Package Type P 626
Pin Count 24
Switching Speed 20kHz
Maximum Power Dissipation 255 W
Dimensions 87 x 50.2 x 12mm
Height 12mm
Length 87mm
Maximum Operating Temperature +110 °C
Minimum Operating Temperature -20 °C
Width 50.2mm
58 In stock for delivery within 5 working day(s)
Price (ex. GST) Each
$ 110.24
(exc. GST)
$ 121.26
(inc. GST)
units
Per unit
1 - 9
$110.24
10 - 49
$109.13
50 - 99
$108.04
100 - 249
$106.96
250 +
$105.89
Related Products
The Insulated Gate Bipolar Transistor or IGBT is ...
Description:
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by ...
The Insulated Gate Bipolar Transistor or IGBT is ...
Description:
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by ...
The Insulated Gate Bipolar Transistor or IGBT is ...
Description:
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by ...
The Insulated Gate Bipolar Transistor or IGBT is ...
Description:
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by ...