Fuji Electric 6MBI75VA-120-50, M636 3 Phase Bridge IGBT Module, 75 A max, 1200 V, Through Hole

  • RS Stock No. 168-4553
  • Mfr. Part No. 6MBI75VA-120-50
  • Manufacturer Fuji Electric
Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): JP
Product Details

IGBT Modules 6-Pack, Fuji Electric

V-Series, 6th Generation Field-Stop
U/U4 Series, 5th Generation Field-Stop
S-Series, 4th Generation NPT

Note

Maximum collector current (Ic) values are stated per transistor within the module.

IGBT Discretes & Modules, Fuji Electric

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Specifications
Attribute Value
Transistor Configuration 3 Phase
Configuration 3 Phase Bridge
Maximum Continuous Collector Current 75 A
Maximum Collector Emitter Voltage 1200 V
Maximum Gate Emitter Voltage ±20V
Channel Type N
Mounting Type Through Hole
Package Type M636
Pin Count 28
Maximum Power Dissipation 385 W
Dimensions 107.5 x 45 x 17mm
Height 17mm
Length 107.5mm
Maximum Operating Temperature +150 °C
Width 45mm
Discontinued product
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