Fuji Electric 2MBI100VA-060-50, M263 Series IGBT Module, 100 A max, 600 V, Surface Mount

  • RS Stock No. 168-4550
  • Mfr. Part No. 2MBI100VA-060-50
  • Manufacturer Fuji Electric
Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): JP
Product Details

IGBT Modules 2-Pack, Fuji Electric

V-Series, 6th Generation Field-Stop
U/U4 Series, 5th Generation Field-Stop
S-Series, 4th Generation NPT

IGBT Discretes & Modules, Fuji Electric

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Specifications
Attribute Value
Transistor Configuration Series
Configuration Series
Maximum Continuous Collector Current 100 A
Maximum Collector Emitter Voltage 600 V
Maximum Gate Emitter Voltage ±20V
Channel Type N
Mounting Type Surface Mount
Package Type M263
Pin Count 7
Maximum Power Dissipation 650 W
Dimensions 94 x 34 x 30mm
Height 30mm
Length 94mm
Maximum Operating Temperature +150 °C
Width 34mm
On back order for despatch 27/09/2019, delivery within 5 working days from despatch date.
Price (ex. GST) Each (In a Box of 10)
$ 100.559
(exc. GST)
$ 110.615
(inc. GST)
units
Per unit
Per Box*
10 +
$100.559
$1,005.59
*price indicative
Related Products
The Insulated Gate Bipolar Transistor or IGBT is ...
Description:
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by ...
High performance and high reliability IGBT with six ...
Description:
High performance and high reliability IGBT with six drivers per module. Amplifier for driverUnder voltage protection circuitOver current protection circuitIGBT Chip over heating protection.
A range of SEMITOP® IGBT modules from Semikron ...
Description:
A range of SEMITOP® IGBT modules from Semikron incorporating two series-connected (half bridge) IGBT devices. The modules are available in a wide range of voltage and current ratings and are suitable for a variety of power switching applications such as ...
The Infineon range of IGBT Modules offer low ...
Description:
The Infineon range of IGBT Modules offer low switching loss for switching up to 60 Khz frequencies. The IGBTs span over a range of power modules like the ECONOPACK packages with collector emitter voltage at 1200V, PrimePACK IGBT half-bridge chopper ...