Infineon FS150R12KT4BOSA1, EconoPACK 3 3 Phase Bridge IGBT Transistor Module, 150 A max, 1200 V, Surface Mount

  • RS Stock No. 166-0972
  • Mfr. Part No. FS150R12KT4BOSA1
  • Manufacturer Infineon
Technical data sheets
Legislation and Compliance
RoHS Status: Exempt
COO (Country of Origin): MY
Product Details

IGBT Modules, Infineon

The Infineon range of IGBT Modules offer low switching loss for switching up to 60 Khz frequencies.
The IGBTs span over a range of power modules like the ECONOPACK packages with collector emitter voltage at 1200V, PrimePACK IGBT half-bridge chopper modules with NTC up to 1600/1700V. The PrimePACK IGBT’s can be found in Industrial, commercial, construction and agricultural vehicles. The N-Channel TRENCHSTOP TM and Fieldstop IGBT Modules are suitable for hard switching and soft switching applications such as Inverters, UPS and Industrial drives.

Package styles include: 62mm Modules, EasyPACK, EconoPACKTM2/EconoPACKTM3/EconoPACKTM4

IGBT Discretes & Modules, Infineon

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Specifications
Attribute Value
Configuration 3 Phase Bridge
Transistor Configuration 3 Phase
Maximum Continuous Collector Current 150 A
Maximum Collector Emitter Voltage 1200 V
Maximum Gate Emitter Voltage ±20V
Channel Type N
Mounting Type Surface Mount
Package Type EconoPACK 3
Pin Count 35
Maximum Power Dissipation 750 W
Dimensions 122 x 62 x 17mm
Height 17mm
Length 122mm
Maximum Operating Temperature +150 °C
Width 62mm
Minimum Operating Temperature -40 °C
On back order for despatch 26/02/2020, delivery within 5 working days from despatch date.
Price (ex. GST) Each (In a Tray of 10)
$ 409.869
(exc. GST)
$ 450.856
(inc. GST)
units
Per unit
Per Tray*
10 +
$409.869
$4,098.69
*price indicative
Related Products
Devices integrating two transistors are available in ultra-compact ...
Description:
Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillators, driver ICs and so forth. Ultra-compact complex digital transistorBuilt-In Biasing ResistorsPotential divider ...
The Insulated Gate Bipolar Transistor or IGBT is ...
Description:
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by ...
The Infineon range of IGBT Modules offer low ...
Description:
The Infineon range of IGBT Modules offer low switching loss for switching up to 60 Khz frequencies. The IGBTs span over a range of power modules like the ECONOPACK packages with collector emitter voltage at 1200V, PrimePACK IGBT half-bridge chopper ...
The Insulated Gate Bipolar Transistor or IGBT is ...
Description:
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by ...