- RS Stock No.:
- 125-8046
- Mfr. Part No.:
- IXGN320N60A3
- Brand:
- IXYS
1 In AU stock for next working day delivery
10 In Global stock for delivery within 10 working day(s)
Added
Price (ex. GST) Each
Was $42.12
You pay
$37.94
(exc. GST)
$41.73
(inc. GST)
Units | Per unit |
1 - 2 | $37.94 |
3 - 4 | $37.44 |
5 + | $36.66 |
- RS Stock No.:
- 125-8046
- Mfr. Part No.:
- IXGN320N60A3
- Brand:
- IXYS
Technical data sheets
Legislation and Compliance
Product Details
IGBT Discretes, IXYS
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifications
Attribute | Value |
---|---|
Maximum Continuous Collector Current | 320 A |
Maximum Collector Emitter Voltage | 600 V |
Maximum Gate Emitter Voltage | ±20V |
Maximum Power Dissipation | 735 W |
Configuration | Single |
Package Type | SOT-227B |
Mounting Type | Surface Mount |
Channel Type | N |
Pin Count | 4 |
Switching Speed | 5kHz |
Transistor Configuration | Common Emitter |
Dimensions | 38.23 x 25.07 x 9.6mm |
Minimum Operating Temperature | -55 °C |
Maximum Operating Temperature | +150 °C |
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