Fuji Electric 2MBI200U2A-060-50, M235 Series IGBT Module, 200 A max, 600 V, Panel Mount

  • RS Stock No. 462-859
  • Mfr. Part No. 2MBI200U2A-060-50
  • Manufacturer Fuji Electric
Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

IGBT Modules 2-Pack, Fuji Electric

V-Series, 6th Generation Field-Stop
U/U4 Series, 5th Generation Field-Stop
S-Series, 4th Generation NPT

IGBT Discretes & Modules, Fuji Electric

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Specifications
Attribute Value
Configuration Series
Transistor Configuration Series
Maximum Continuous Collector Current 200 A
Maximum Collector Emitter Voltage 600 V
Maximum Gate Emitter Voltage ±20V
Channel Type N
Mounting Type Panel Mount
Package Type M235
Pin Count 7
Maximum Power Dissipation 660 W
Dimensions 92 x 34 x 30mm
Height 30mm
Length 92mm
Maximum Operating Temperature +150 °C
Width 34mm
15 In stock for delivery within 5 working day(s)
Price (ex. GST) Each
$ 161.05
(exc. GST)
$ 177.15
(inc. GST)
units
Per unit
1 - 9
$161.05
10 - 49
$152.57
50 - 99
$131.42
100 - 249
$117.48
250 +
$113.76
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The Insulated Gate Bipolar Transistor or IGBT is ...
Description:
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by ...