Fuji Electric 6MBI50U4A-120-50, M636 , N-Channel 3 Phase Bridge IGBT Module, 50 A max, 1200 V, PCB Mount
- RS Stock No.:
- 462-837
- Mfr. Part No.:
- 6MBI50U4A-120-50
- Brand:
- Fuji Electric
Discontinued product
- RS Stock No.:
- 462-837
- Mfr. Part No.:
- 6MBI50U4A-120-50
- Brand:
- Fuji Electric
Technical data sheets
Legislation and Compliance
Product Details
IGBT Modules 6-Pack, Fuji Electric
V-Series, 6th Generation Field-Stop
U/U4 Series, 5th Generation Field-Stop
S-Series, 4th Generation NPT
U/U4 Series, 5th Generation Field-Stop
S-Series, 4th Generation NPT
Note
Maximum collector current (Ic) values are stated per transistor within the module.
IGBT Discretes & Modules, Fuji Electric
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifications
Attribute | Value |
|---|---|
| Maximum Continuous Collector Current | 50 A |
| Maximum Collector Emitter Voltage | 1200 V |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Power Dissipation | 275 W |
| Package Type | M636 |
| Configuration | 3 Phase Bridge |
| Mounting Type | PCB Mount |
| Channel Type | N |
| Pin Count | 28 |
| Transistor Configuration | 3 Phase |
| Dimensions | 107.5 x 45 x 17mm |
| Maximum Operating Temperature | +150 °C |