IXYS MUBW50-06A7, , N-Channel 3 Phase Bridge IGBT Module, 75 A max, 600 V, PCB Mount

  • RS Stock No. 194-580
  • Mfr. Part No. MUBW50-06A7
  • Manufacturer IXYS
Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

IGBT Modules, IXYS

IGBT Discretes & Modules, IXYS

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Specifications
Attribute Value
Transistor Configuration 3 Phase
Configuration 3 Phase Bridge
Maximum Continuous Collector Current 75 A
Maximum Collector Emitter Voltage 600 V
Maximum Gate Emitter Voltage ±20V
Channel Type N
Mounting Type PCB Mount
Pin Count 23
Dimensions 107.5 x 45 x 17mm
Height 17mm
Length 107.5mm
Maximum Operating Temperature +125 °C
Width 45mm
Minimum Operating Temperature -40 °C
24 In stock for delivery within 7 working day(s) (Global Stock)
Price (ex. GST) Each
$ 102.45
(exc. GST)
$ 112.69
(inc. GST)
units
Per unit
1 - 9
$102.45
10 - 49
$101.74
50 - 99
$100.72
100 - 249
$99.72
250 +
$98.73
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