IXYS MID200-12A4, Y3 DCB IGBT Module, 270 A max, 1200 V, Panel Mount

  • RS Stock No. 194-394
  • Mfr. Part No. MID200-12A4
  • Manufacturer IXYS
Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

IGBT Modules, IXYS

IGBT Discretes & Modules, IXYS

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Specifications
Attribute Value
Transistor Configuration Single
Configuration Single
Maximum Continuous Collector Current 270 A
Maximum Collector Emitter Voltage 1200 V
Maximum Gate Emitter Voltage ±20V
Channel Type N
Mounting Type Panel Mount
Package Type Y3 DCB
Pin Count 5
Dimensions 110 x 62 x 30mm
Height 30mm
Length 110mm
Maximum Operating Temperature +150 °C
Width 62mm
Minimum Operating Temperature -40 °C
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Price (ex. GST) Each
$ 138.92
(exc. GST)
$ 152.81
(inc. GST)
units
Per unit
1 - 9
$138.92
10 - 49
$138.89
50 - 99
$137.38
100 - 249
$135.20
250 +
$132.41
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IGBT Modules, IXYS The Insulated Gate Bipolar Transistor ...
Description:
IGBT Modules, IXYS The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of ...