IXYS MII75-12A3, Y4 M5 Series IGBT Module, 90 A max, 1200 V, Panel Mount

  • RS Stock No. 193-880
  • Mfr. Part No. MII75-12A3
  • Manufacturer IXYS
Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

IGBT Modules, IXYS

IGBT Discretes & Modules, IXYS

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Specifications
Attribute Value
Configuration Series
Transistor Configuration Series
Maximum Continuous Collector Current 90 A
Maximum Collector Emitter Voltage 1200 V
Maximum Gate Emitter Voltage ±20V
Channel Type N
Mounting Type Panel Mount
Package Type Y4 M5
Pin Count 7
Dimensions 94 x 34 x 30mm
Height 30mm
Length 94mm
Maximum Operating Temperature +150 °C
Minimum Operating Temperature -40 °C
Width 34mm
11 In stock for delivery within 5 working day(s)
Price (ex. GST) Each
$ 84.87
(exc. GST)
$ 93.36
(inc. GST)
units
Per unit
1 - 9
$84.87
10 - 49
$84.78
50 - 99
$81.41
100 - 249
$78.15
250 +
$75.03
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The Insulated Gate Bipolar Transistor or IGBT is ...
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The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by ...
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The Insulated Gate Bipolar Transistor or IGBT is ...
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