Cypress Semiconductor FM25L16B-DG FRAM Memory

Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): US
Product Details

16-Kbit ferroelectric random access memory (F-RAM) logically organized as 2K ´ 8
High-endurance 100 trillion (1014) read/writes
151-year data retention (See the Data Retention and Endurance table)
No Delay™ writes
Advanced high-reliability ferroelectric process
Very fast serial peripheral interface (SPI)
Up to 20 MHz frequency
Direct hardware replacement for serial flash and EEPROM
Supports SPI mode 0 (0, 0) and mode 3 (1, 1)
Sophisticated write protection scheme
Hardware protection using the Write Protect (WP) pin
Software protection using Write Disable instruction
Software block protection for 1/4, 1/2, or entire array
Low power consumption
200 μA active current at 1 MHz
3 μA (typ) standby current
Low-voltage operation: VDD = 2.7 V to 3.6 V
Industrial temperature: -40°C to +85°C
Packages
8-pin small outline integrated circuit (SOIC) package
8-pin thin dual flat no leads (DFN) package

404 In stock for delivery within 5 working day(s)
Price (ex. GST) Each (In a Pack of 4)
$ 3.763
(exc. GST)
$ 4.139
(inc. GST)
units
Per unit
Per Pack*
4 - 36
$3.763
$15.052
40 - 96
$3.385
$13.54
100 - 396
$3.32
$13.28
400 - 996
$2.988
$11.952
1000 +
$2.875
$11.50
*price indicative
Packaging Options: