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Cypress Semiconductor 1Mbit Parallel FRAM Memory 32-Pin TSOP, FM28V100-TG


100 In stock for delivery within 7 working day(s)
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Price (ex. GST) Each

$43.60

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$47.96

(inc. GST)

units

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Packaging Options:
RS Stock No.:
125-4231
Mfr. Part No.:
FM28V100-TG
Manufacturer:
Cypress Semiconductor
unitsPer unit
1 - 9$43.60
10 - 49$41.51
50 - 99$39.58
100 - 499$35.71
500 +$32.91

F-RAM, Cypress Semiconductor


Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.


Nonvolatile Ferroelectric RAM Memory
Fast write speed
High endurance
Low power consumption


FRAM (Ferroelectric RAM)

FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.

AttributeValue
Memory Size1Mbit
Organisation128K x 8 bit
Interface TypeParallel
Maximum Random Access Time60ns
Mounting TypeSurface Mount
Package TypeTSOP
Pin Count32
Dimensions11.9 x 8.1 x 1.05mm
Length11.9mm
Maximum Operating Supply Voltage3.6 V
Width8.1mm
Height1.05mm
Maximum Operating Temperature+85 °C
Minimum Operating Supply Voltage2 V
Minimum Operating Temperature-40 °C
Number of Words128K
Number of Bits per Word8bit