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Cypress Semiconductor 4kbit Serial-2 Wire, Serial-I2C FRAM Memory 8-Pin SOIC, FM24CL04B-G

30 In stock for delivery within 7 working day(s)
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Packaging Options:
RS Stock No.:
Mfr. Part No.:
Cypress Semiconductor
unitsPer unitPer Pack*
5 - 5$2.42$12.10
10 - 20$2.208$11.04
25 - 95$2.096$10.48
100 - 495$1.918$9.59
500 +$1.794$8.97
*price indicative

F-RAM, Cypress Semiconductor

Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.

Nonvolatile Ferroelectric RAM Memory
Fast write speed
High endurance
Low power consumption

FRAM (Ferroelectric RAM)

FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.

Memory Size4kbit
Organisation512 x 8 bit
Interface TypeSerial-2 Wire, Serial-I2C
Mounting TypeSurface Mount
Package TypeSOIC
Pin Count8
Dimensions4.97 x 3.98 x 1.48mm
Maximum Operating Supply Voltage3.65 V
Maximum Operating Temperature+85 °C
Number of Words512
Minimum Operating Temperature-40 °C
Minimum Operating Supply Voltage2.7 V
Number of Bits per Word8bit