Cypress Semiconductor FM28V202A-TG Parallel FRAM Memory, 2Mbit, 60ns, 2 → 3.6 V 44-Pin TSOP

Technical data sheets
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Product Details

F-RAM, Cypress Semiconductor

Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.

Nonvolatile Ferroelectric RAM Memory
Fast write speed
High endurance
Low power consumption

FRAM (Ferroelectric RAM)

FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.

Specifications
Attribute Value
Memory Size 2Mbit
Organisation 128K x 16 bit
Interface Type Parallel
Data Bus Width 16bit
Maximum Random Access Time 60ns
Mounting Type Surface Mount
Package Type TSOP
Pin Count 44
Dimensions 18.51 x 10.26 x 1.04mm
Length 18.51mm
Maximum Operating Supply Voltage 3.6 V
Width 10.26mm
Height 1.04mm
Maximum Operating Temperature +85 °C
Minimum Operating Supply Voltage 2 V
Number of Bits per Word 16bit
Number of Words 128K
Minimum Operating Temperature -40 °C
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