Cypress Semiconductor FM25V10-G SPI FRAM Memory, 1Mbit, 2 → 3.6 V 8-Pin SOIC

Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

F-RAM, Cypress Semiconductor

Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.

Nonvolatile Ferroelectric RAM Memory
Fast write speed
High endurance
Low power consumption

1-Mbit ferroelectric random access memory (F-RAM) logically organized as 128K ´ 8
High-endurance 100 trillion (1014) read/writes
151-year data retention
NoDelay™ writes
Advanced high-reliability ferroelectric process
Very fast serial peripheral interface (SPI)
Up to 40-MHz frequency
Direct hardware replacement for serial flash and EEPROM
Supports SPI mode 0 (0, 0) and mode 3 (1, 1)
Sophisticated write protection scheme
Hardware protection using the Write Protect (WP) pin
Software protection using Write Disable instruction
Software block protection for 1/4, 1/2, or entire array
Device ID and Serial Number
Manufacturer ID and Product ID
Unique Serial Number (FM25VN10)
Low power consumption
300 μA active current at 1 MHz
90 μA (typ) standby current
5 μA sleep mode current
Low-voltage operation: VDD = 2.0 V to 3.6 V
Industrial temperature: –40 °C to +85 °C
Packages
8-pin small outline integrated circuit (SOIC) package
8-pin dual flat no-leads (DFN) package

FRAM (Ferroelectric RAM)

FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.

Specifications
Attribute Value
Memory Size 1Mbit
Organisation 128K x 8 bit
Interface Type SPI
Data Bus Width 8bit
Mounting Type Surface Mount
Package Type SOIC
Pin Count 8
Dimensions 4.97 x 3.98 x 1.47mm
Length 4.97mm
Width 3.98mm
Maximum Operating Supply Voltage 3.6 V
Height 1.47mm
Maximum Operating Temperature +85 °C
Minimum Operating Supply Voltage 2 V
Number of Words 128K
Number of Bits per Word 8bit
Minimum Operating Temperature -40 °C
230 In stock for delivery within 5 working day(s)
Price (ex. GST) Each
$ 17.55
(exc. GST)
$ 19.31
(inc. GST)
units
Per unit
1 - 9
$17.55
10 - 24
$15.72
25 - 99
$15.27
100 - 499
$13.45
500 +
$12.64
Packaging Options:
Related Products
The W74M32FV (32M-bit) Serial Flash memory provides a ...
Description:
The W74M32FV (32M-bit) Serial Flash memory provides a storage solution for systems with limited space, pins and power. The W74 series offers flexibility and performance well beyond ordinary Serial Flash devices. They are ideal for code shadowing to RAM, executing ...
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and ...
Description:
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified. Nonvolatile Ferroelectric RAM MemoryFast write ...
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and ...
Description:
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified. Nonvolatile Ferroelectric RAM MemoryFast write ...
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and ...
Description:
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified. Nonvolatile Ferroelectric RAM MemoryFast write ...