Cypress Semiconductor FM24V02A-G Serial-I2C FRAM Memory, 256kbit, 2 → 3.6 V 8-Pin SOIC

Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

F-RAM, Cypress Semiconductor

Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.

Nonvolatile Ferroelectric RAM Memory
Fast write speed
High endurance
Low power consumption

256-Kbit ferroelectric random access memory (F-RAM logically organized as 32K ´ 8
High-endurance 100 trillion (1014) read/writes
151-year data retention (See the Data Retention an Endurance table)
NoDelay™ writes
Advanced high-reliability ferroelectric process
Fast two-wire serial interface (I2C)
Up to 3.4-MHz frequency[1]
Direct hardware replacement for serial EEPROM
Supports legacy timings for 100 kHz and 400 kHz
Device ID
Manufacturer ID and Product ID
Low power consumption
175-μA active current at 100 kHz
150-μA standby current
8-μA sleep mode current
Low-voltage operation: VDD = 2.0 V to 3.6 V
Industrial temperature: –40 °C to +85 °C
8-pin small outline integrated circuit (SOIC) package

FRAM (Ferroelectric RAM)

FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.

Specifications
Attribute Value
Memory Size 256kbit
Organisation 32K x 8 bit
Interface Type Serial-I2C
Data Bus Width 8bit
Mounting Type Surface Mount
Package Type SOIC
Pin Count 8
Dimensions 4.97 x 3.98 x 1.47mm
Length 4.97mm
Maximum Operating Supply Voltage 3.6 V
Width 3.98mm
Height 1.47mm
Maximum Operating Temperature +85 °C
Minimum Operating Temperature -40 °C
Minimum Operating Supply Voltage 2 V
Number of Words 32K
Number of Bits per Word 8bit
2482 In stock for delivery within 5 working day(s)
Price (ex. GST) Each (In a Pack of 2)
$ 10.60
(exc. GST)
$ 11.66
(inc. GST)
units
Per unit
Per Pack*
2 - 8
$10.60
$21.20
10 - 18
$9.215
$18.43
20 - 98
$8.625
$17.25
100 - 498
$8.045
$16.09
500 +
$7.49
$14.98
*price indicative
Packaging Options:
Related Products
8M-bit 3.0V Serial Flash Memory with uniform 4KB ...
Description:
8M-bit 3.0V Serial Flash Memory with uniform 4KB sectors and Dual/Quad SPI. Dual/Quad Serial Peripheral InterfaceUniform 4KB erasable sectors & 32KB/64KB erasable blocks4,096 pages (256 bytes), page program in 0.8mS (typ.)Single/Dual/Quad Fast Read instructions8/16/32/64byte wrap around for Fast Read Dual/Quad ...
128M-bit Serial Flash Memory with uniform 4KB sectors ...
Description:
128M-bit Serial Flash Memory with uniform 4KB sectors and Dual/Quad SPI. Single/Dual/Quad SPI operationsUniform 4KB erasable sectors & 32KB/64KB erasable blocks65,536 pages (256 bytes), page program in 0.7mS (typ.)Continuous Read with 8/16/32/64 Byte WrapClock operation up to 133MHz (266/532MHz equivalent ...
Density 2Mbit Voltage 2.3 - 3.6V Speed 104MHZ ...
Description:
Density 2Mbit Voltage 2.3 - 3.6V Speed 104MHZ Package 150mil SOIC\VSOP Package WSON 5x6mm Package USON 2x3mm. Single and Dual Serial Peripheral InterfaceUniform 4KB erasable sectors & 32KB/64KB erasable blocks1024 pages (256 bytes), page program in 0.4mS (typ.)Fast Read (0Bh), ...
Integrated devices that includes the most commonly needed ...
Description:
Integrated devices that includes the most commonly needed functions for processor-based systems. Serial Nonvolatile FRAM MemoryReal-time Clock (RTC)Low Voltage ResetWatchdog TimerEarly Power-Fail Warning/NMITwo 16-bit Event CountersSerial Number with Write-lock for SecurityBattery-backed switchoverEvent Counter ...