ON Semiconductor, FJP2160DTU, Emmitter Switched

Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): KR
Product Details

ESBC™ Power Transistor, Fairchild Semiconductor

Bipolar NPN power transistors designed for use in ESBC™ (Emitter-Switched Bipolar/MOSFET Cascode) configurations together with appropriate power MOSFET devices. This power switch configuration provides increased efficiency, flexibility and robustness and driving power is minimized due to the absence of Miller capacitance in the design.

Bipolar Transistors, Fairchild Semiconductor

Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.

Specifications
Attribute Value
Transistor Type NPN
Maximum DC Collector Current 2 A
Maximum Collector Source Voltage 2.21V
Maximum Power Dissipation 100 W
Minimum DC Current Gain 20
Mounting Type Through Hole
Package Type TO-220
Pin Count 3
Maximum Base Source Voltage ±20V
Maximum Gate Source Voltage -20 V, +20 V
Maximum Base Current 1A
Category Silicon Transistor
Dimensions 9.9 x 4.5 x 15.95mm
Height 15.95mm
Length 9.9mm
Maximum Operating Temperature +125 °C
Width 4.5mm
Minimum Operating Temperature -55 °C
Discontinued product
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Description:
Bipolar NPN power transistors designed for use in ESBC™ (Emitter-Switched Bipolar/MOSFET Cascode) configurations together with appropriate power MOSFET devices. This power switch configuration provides increased efficiency, flexibility and robustness and driving power is minimized due to the absence of Miller ...