Infineon BFP720H6327XTSA1 NPN Transistor, 25 mA, 13 V, 4-Pin SOT-343

  • RS Stock No. 897-7282
  • Mfr. Part No. BFP720H6327XTSA1
  • Manufacturer Infineon
Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

SiGe RF Bipolar Transistors, Infineon

A range of ultra-low-noise wideband NPN bipolar RF transistors from Infineon. These hetero-junction bipolar devices utilize Infineon’s silicon germanium carbon (SiGe:C) material technology and are especially suited for use mobile applications in which low power consumption is a key requirement. With typical transition frequencies of up to 65 GHz these devices offer high power gain at frequencies of up to 10 GHz when used in amplifier applications. The transistors include internal circuitry for ESD and excessive RF input power protection.

Bipolar Transistors, Infineon

Specifications
Attribute Value
Transistor Type NPN
Maximum DC Collector Current 25 mA
Maximum Collector Emitter Voltage 13 V
Package Type SOT-343
Mounting Type Surface Mount
Maximum Power Dissipation 100 mW
Minimum DC Current Gain 160
Transistor Configuration Single
Maximum Collector Base Voltage 13 V
Maximum Emitter Base Voltage 1.2 V
Pin Count 4
Number of Elements per Chip 1
Height 0.9mm
Maximum Operating Temperature +150 °C
Length 2mm
Width 1.25mm
Dimensions 2 x 1.25 x 0.9mm
Transistor Material SiGe
2085 In stock for delivery within 5 working day(s) (Global Stock)
Price (ex. GST) Each (In a Pack of 15)
$ 0.677
(exc. GST)
$ 0.745
(inc. GST)
units
Per unit
Per Pack*
15 - 15
$0.677
$10.155
30 - 60
$0.615
$9.225
75 - 135
$0.591
$8.865
150 - 285
$0.587
$8.805
300 +
$0.57
$8.55
*price indicative
Packaging Options:
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