Infineon BFP720H6327XTSA1 NPN Transistor, 25 mA, 13 V, 4-Pin SOT-343

  • RS Stock No. 897-7282
  • Mfr. Part No. BFP720H6327XTSA1
  • Manufacturer Infineon
Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

SiGe RF Bipolar Transistors, Infineon

A range of ultra-low-noise wideband NPN bipolar RF transistors from Infineon. These hetero-junction bipolar devices utilize Infineon’s silicon germanium carbon (SiGe:C) material technology and are especially suited for use mobile applications in which low power consumption is a key requirement. With typical transition frequencies of up to 65 GHz these devices offer high power gain at frequencies of up to 10 GHz when used in amplifier applications. The transistors include internal circuitry for ESD and excessive RF input power protection.

Bipolar Transistors, Infineon

Specifications
Attribute Value
Transistor Type NPN
Maximum DC Collector Current 25 mA
Maximum Collector Emitter Voltage 13 V
Package Type SOT-343
Mounting Type Surface Mount
Maximum Power Dissipation 100 mW
Minimum DC Current Gain 160
Transistor Configuration Single
Maximum Collector Base Voltage 13 V
Maximum Emitter Base Voltage 1.2 V
Pin Count 4
Number of Elements per Chip 1
Maximum Operating Temperature +150 °C
Height 0.9mm
Width 1.25mm
Length 2mm
Transistor Material SiGe
Dimensions 2 x 1.25 x 0.9mm
2250 In stock for delivery within 5 working day(s)
Price (ex. GST) Each (In a Pack of 15)
$ 0.593
(exc. GST)
$ 0.652
(inc. GST)
units
Per unit
Per Pack*
15 - 15
$0.593
$8.895
30 - 60
$0.515
$7.725
75 - 135
$0.487
$7.305
150 - 285
$0.481
$7.215
300 +
$0.461
$6.915
*price indicative
Packaging Options:
Related Products
40 V, 15 A PNP high power bipolar ...
Description:
40 V, 15 A PNP high power bipolar transistor, PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. NPN complement PHPT60415NY. High thermal power dissipation capabilityHigh temperature applications up to 175 °CReduced Printed Circuit ...
Complete isolation between transistors. ...
Description:
Complete isolation between transistors.
The BFP842ESD is a high performance HBT (Heterojunction ...
Description:
The BFP842ESD is a high performance HBT (Heterojunction Bipolar Transistor) specifically designed for 2.3 - 3.5 GHz LNA applications. The device is based upon the reliable high volume SiGe:C technology of Infineon. The BFP842ESD provides inherently good input power match ...
The BFP840FESD is a high performance HBT (Heterojunction ...
Description:
The BFP840FESD is a high performance HBT (Heterojunction Bipolar Transistor) specifically designed for 5-6 GHz WiFi applications. The device is based upon the reliable high volume SiGe:C technology of Infineon. The BFP840FESD provides inherently good input and output power match ...