STMicroelectronics BD139 NPN Transistor, 3 A, 80 V, 3-Pin SOT-32

Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): CN
Product Details

General Purpose NPN Transistors, STMicroelectronics

//media.rs-online.com/t_line/LBIPOLAR-23.gif
//media.rs-online.com/t_line/R7140483-01.jpg

Bipolar Transistors, STMicroelectronics

A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.

Specifications
Attribute Value
Transistor Type NPN
Maximum DC Collector Current 3 A
Maximum Collector Emitter Voltage 80 V
Package Type SOT-32
Mounting Type Through Hole
Maximum Power Dissipation 1.25 W
Minimum DC Current Gain 25
Transistor Configuration Single
Maximum Collector Base Voltage 80 V
Maximum Emitter Base Voltage 5 V
Pin Count 3
Number of Elements per Chip 1
Dimensions 10.8 x 7.8 x 2.7mm
Minimum Operating Temperature -65 °C
Maximum Collector Emitter Saturation Voltage 0.5 V
Maximum Operating Temperature +150 °C
Length 7.8mm
Width 2.7mm
Height 10.8mm
766 In stock for delivery within 7 working day(s) (Global Stock)
Price (ex. GST) Each
$ 0.96
(exc. GST)
$ 1.06
(inc. GST)
units
Per unit
1 - 9
$0.96
10 - 49
$0.91
50 - 99
$0.88
100 - 249
$0.77
250 +
$0.71
Related Products
NPN Power Transistors, STMicroelectronics A broad range of ...
Description:
NPN Power Transistors, STMicroelectronics A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.
Low Saturation Voltage PNP Transistors A range of ...
Description:
Low Saturation Voltage PNP Transistors A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage PNP Bipolar Junction Transistors These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced ...