BIP C77 NPN 4A 80V FG

Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

The Darlington Bipolar Power Transistor is designed for general purpose amplifier and low speed switching applications. The MJE700, MJE702, MJE703 (PNP), and MJE800, MJE802, MJE803 (NPN) are complementary devices.

High DC Current Gain - hFE = 2000 (Typ) @ IC = 2.0 Adc
Monolithic Construction with Built-in Base-Emitter Resistors to Limit Leakage Multiplication
Choice of Packages - MJE700 and MJE800 series

Specifications
Attribute Value
Transistor Type NPN
Maximum DC Collector Current 4 A
Maximum Collector Emitter Voltage 80 V dc
Package Type TO-225
Mounting Type Through Hole
Maximum Power Dissipation 40 W
Minimum DC Current Gain 100
Transistor Configuration Single
Maximum Collector Base Voltage 80 V dc
Maximum Emitter Base Voltage 5 V dc
Maximum Operating Frequency 1 MHz
Pin Count 3
Number of Elements per Chip 1
Length 7.8mm
Maximum Operating Temperature +150 °C
Minimum Operating Temperature -55 °C
Dimensions 7.8 x 3 x 11.1mm
Maximum Collector Emitter Saturation Voltage 3 V dc
Transistor Material Si
Height 11.1mm
Width 3mm
Stock check temporarily unavailable - call for stock availability
Price (ex. GST) Each (In a Pack of 20)
$ 0.729
(exc. GST)
$ 0.802
(inc. GST)
units
Per unit
Per Pack*
20 - 40
$0.729
$14.58
60 - 80
$0.616
$12.32
100 - 180
$0.528
$10.56
200 - 380
$0.478
$9.56
400 +
$0.438
$8.76
*price indicative
Packaging Options: