BIP C77 NPN 4A 80V FG

Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): MY
Product Details

The Darlington Bipolar Power Transistor is designed for general purpose amplifier and low speed switching applications. The MJE700, MJE702, MJE703 (PNP), and MJE800, MJE802, MJE803 (NPN) are complementary devices.

High DC Current Gain - hFE = 2000 (Typ) @ IC = 2.0 Adc
Monolithic Construction with Built-in Base-Emitter Resistors to Limit Leakage Multiplication
Choice of Packages - MJE700 and MJE800 series

Specifications
Attribute Value
Transistor Type NPN
Maximum DC Collector Current 4 A
Maximum Collector Emitter Voltage 80 V dc
Package Type TO-225
Mounting Type Through Hole
Maximum Power Dissipation 40 W
Minimum DC Current Gain 100
Transistor Configuration Single
Maximum Collector Base Voltage 80 V dc
Maximum Emitter Base Voltage 5 V dc
Maximum Operating Frequency 1 MHz
Pin Count 3
Number of Elements per Chip 1
Maximum Collector Emitter Saturation Voltage 3 V dc
Length 7.8mm
Minimum Operating Temperature -55 °C
Maximum Operating Temperature +150 °C
Height 11.1mm
Transistor Material Si
Width 3mm
Dimensions 7.8 x 3 x 11.1mm
3400 In stock for delivery within 5 working day(s) (Global Stock)
Price (ex. GST) Each (In a Pack of 20)
$ 0.665
(exc. GST)
$ 0.731
(inc. GST)
units
Per unit
Per Pack*
20 - 40
$0.665
$13.30
60 - 80
$0.518
$10.36
100 - 180
$0.466
$9.32
200 - 380
$0.423
$8.46
400 +
$0.388
$7.76
*price indicative
Packaging Options:
Related Products
Bipolar Junction Transistors (BJT) broad range provides complete ...
Description:
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.
Bipolar Junction Transistors (BJT) broad range provides complete ...
Description:
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.
The Power 4 A, 80 V Bipolar NPN ...
Description:
The Power 4 A, 80 V Bipolar NPN Transistors is for use in power amplifier and switching circuits This transistor has excellent safe area limits and is a complement to PNP 2N5194, 2N5195. These Devices are Pb-Free.
2SC6082 is a Bipolar Transistor, 50 V, 15 ...
Description:
2SC6082 is a Bipolar Transistor, 50 V, 15 A, Low VCE (sat), NPN TO-220F-3SG for High-Speed Switching Application Adoption of MBIT process Large current capacitance Low collector to emitter saturation voltage High speed switching ApplicationsHigh-speed switching applications (Switching regulator, driver ...