onsemi MJE200G NPN Transistor, 10 A, 40 V, 3-Pin TO-225

RS Stock No.:: 184-4894
Mfr. Part No.:: MJE200G
Brand:: onsemi

onsemi MJE200G NPN Transistor, 10 A, 40 V, 3-Pin TO-225

25 In Global stock for delivery within 5 working day(s)

125 In Global stock for delivery within 10 working day(s)

Added

Price (ex. GST) Each (In a Pack of 25)

$1.038

(exc. GST)

$1.142

(inc. GST)

Units	Per unit	Per Pack*
25 - 100	$1.038	$25.95
125 - 225	$1.012	$25.30
250 +	$0.996	$24.90
*price indicative

RS Stock No.:: 184-4894
Mfr. Part No.:: MJE200G
Brand:: onsemi

Technical data sheets

Datasheet MJE200G

Legislation and Compliance

COO (Country of Origin):: CN

Product Details

The Bipolar Power Transistor is designed for low voltage, low power and high gain audio amplifier applications. The MJE200 (NPN) and MJE210 (PNP) are complementary devices.

High DC Current Gain
Low Collector-Emitter Saturation Voltage
High Current-Gain - Bandwidth Product
Annular Construction for Low Leakage
These Devices are Pb-Free

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

Specifications

Attribute	Value
Transistor Type	NPN
Maximum DC Collector Current	10 A
Maximum Collector Emitter Voltage	40 V
Package Type	TO-225
Mounting Type	Through Hole
Maximum Power Dissipation	15 W
Minimum DC Current Gain	45
Transistor Configuration	Single
Maximum Collector Base Voltage	25 V dc
Maximum Emitter Base Voltage	8 V dc
Maximum Operating Frequency	10 MHz
Pin Count	3
Number of Elements per Chip	1
Dimensions	7.8 x 3 x 11.1mm
Maximum Operating Temperature	+150 °C

onsemi MJE200G NPN Transistor, 10 A, 40 V, 3-Pin TO-225

Technical data sheets

Legislation and Compliance

Product Details

Specifications

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