Infineon BFP840FESDH6327XTSA1 NPN RF Bipolar Transistor, 35 mA, 2.25 V, 4-Pin TSFP
- RS Stock No.:
- 170-2255
- Mfr. Part No.:
- BFP840FESDH6327XTSA1
- Brand:
- Infineon
On back order for despatch 22/08/2024, delivery within 10 working days from despatch date.
Added
Price (ex. GST) Each (On a Reel of 3000)
$0.264
(exc. GST)
$0.29
(inc. GST)
| Units | Per unit | Per Reel* |
| 3000 - 3000 | $0.264 | $792.00 |
| 6000 - 9000 | $0.262 | $786.00 |
| 12000 + | $0.259 | $777.00 |
| *price indicative | ||
- RS Stock No.:
- 170-2255
- Mfr. Part No.:
- BFP840FESDH6327XTSA1
- Brand:
- Infineon
Technical data sheets
Legislation and Compliance
Product Details
The BFP840FESD is a high performance HBT (Heterojunction Bipolar Transistor) specifically designed for 5-6 GHz WiFi applications. The device is based upon the reliable high volume SiGe:C technology of Infineon. The BFP840FESD provides inherently good input and output power match as well as inherently good noise match at 5-6 GHz. The simultaneous noise and power match without lossy external matching components at the input leads to a low external parts count, to a very good noise figure and to a very high transducer gain in the WiFi application.
Robust high performance low noise amplifier based on Infineon's reliable, high volume SiGe:C wafer technology
2 kV ESD robustness (HBM) due to integrated protection circuits
High maximum RF input power of 21 dBm
0.6 dB minimum noise
26 dB maximum gain
23.5 dBm OIP3 typical at 5.5 GHz, 25 mA
Accurate SPICE GP model available to enable effective design in process
2 kV ESD robustness (HBM) due to integrated protection circuits
High maximum RF input power of 21 dBm
0.6 dB minimum noise
26 dB maximum gain
23.5 dBm OIP3 typical at 5.5 GHz, 25 mA
Accurate SPICE GP model available to enable effective design in process
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
Specifications
Attribute | Value |
|---|---|
| Transistor Type | NPN |
| Maximum DC Collector Current | 35 mA |
| Maximum Collector Emitter Voltage | 2.25 V |
| Package Type | TSFP |
| Mounting Type | Surface Mount |
| Maximum Power Dissipation | 75 mW |
| Transistor Configuration | Single |
| Maximum Collector Base Voltage | 2.9 V |
| Maximum Operating Frequency | 85 GHz |
| Pin Count | 4 |
| Number of Elements per Chip | 1 |
| Maximum Operating Temperature | +150 °C |
| Dimensions | 1.4 x 0.8 x 0.55mm |