Nexperia PBSS5160DS,115 Dual PNP Transistor, 1 A, 60 V, 6-Pin TSOP

  • RS Stock No. 166-1570
  • Mfr. Part No. PBSS5160DS,115
  • Manufacturer Nexperia
Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

Low Saturation Voltage PNP Transistors

A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage PNP Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.

Bipolar Transistors, Nexperia

Specifications
Attribute Value
Transistor Type PNP
Maximum DC Collector Current 1 A
Maximum Collector Emitter Voltage 60 V
Package Type TSOP
Mounting Type Surface Mount
Maximum Power Dissipation 700 mW
Minimum DC Current Gain 100
Transistor Configuration Isolated
Maximum Collector Base Voltage 80 V
Maximum Emitter Base Voltage 5 V
Maximum Operating Frequency 185 MHz
Pin Count 6
Number of Elements per Chip 2
Maximum Base Emitter Saturation Voltage 1.1 V
Minimum Operating Temperature -65 °C
Width 1.7mm
Length 3.1mm
Maximum Operating Temperature +150 °C
Height 1mm
Dimensions 1 x 3.1 x 1.7mm
Maximum Collector Emitter Saturation Voltage 0.33 V
On back order for despatch 01/12/2020, delivery within 7 working days from despatch date.
Price (ex. GST) Each (On a Reel of 3000)
Was $0.242
$ 0.157
(exc. GST)
$ 0.173
(inc. GST)
units
Per unit
Per Reel*
3000 +
$0.157
$471.00
*price indicative
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