ON Semi MJD210RLG PNP Transistor, 5 A, 25 V, 3-Pin DPAK

Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): MY
Product Details

PNP Power Transistors, ON Semiconductor

Standards

Manufacturer Part Nos with NSV prefix are automotive qualified to AEC-Q101 standard.

The Bipolar Power Transistor is designed for low voltage, low power, high gain audio amplifier applications. The MJD200 (NPN) and MJD210 (PNP) are complementary devices.

Collector-Emitter Sustaining Voltage - VCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc
High DC Current Gain - hFE = 70 (Min) @ IC = 500 mAdc= 45 (Min) @ IC = 2 Adc= 10 (Min) @ IC = 5 Adc
Low Collector-Emitter Saturation Voltage - VCE(sat) = 0.30 Vdc (Max) @ IC = 500 mAdc = 0.75 Vdc (Max) @ IC = 2.0 Adc
High Current-Gain - Bandwidth Product - fT = 65 MHz (Min) @ IC = 100 mAdc
Annular Construction for Low Leakage - ICBO = 100 nAdc @ Rated VCB
These Devices are Pb-Free
MJD200 is the complementary NPN device

Specifications
Attribute Value
Transistor Type PNP
Maximum DC Collector Current 5 A
Maximum Collector Emitter Voltage 25 V
Package Type DPAK (TO-252)
Mounting Type Surface Mount
Maximum Power Dissipation 12.5 W
Minimum DC Current Gain 10
Transistor Configuration Single
Maximum Collector Base Voltage 40 V dc
Maximum Emitter Base Voltage 8 V
Maximum Operating Frequency 10 MHz
Pin Count 3
Number of Elements per Chip 1
Dimensions 6.73 x 6.22 x 2.38mm
Maximum Base Emitter Saturation Voltage 2.5 V dc
Length 6.73mm
Width 6.22mm
Maximum Collector Emitter Saturation Voltage 1.8 V dc
Maximum Operating Temperature +150 °C
Minimum Operating Temperature -65 °C
Height 2.38mm
On back order for despatch 09/12/2020, delivery within 7 working days from despatch date.
Price (ex. GST) Each (On a Reel of 1800)
$ 0.286
(exc. GST)
$ 0.315
(inc. GST)
units
Per unit
Per Reel*
1800 +
$0.286
$514.80
*price indicative
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