N-Channel MOSFET, 5.5 A, 100 V, 3-Pin DPAK onsemi FDD86113LZ
- RS Stock No.:
- 772-9130
- Mfr. Part No.:
- FDD86113LZ
- Brand:
- ON Semiconductor
Discontinued product
- RS Stock No.:
- 772-9130
- Mfr. Part No.:
- FDD86113LZ
- Brand:
- ON Semiconductor
Legislation and Compliance
- COO (Country of Origin):
- CN
Product Details
PowerTrench® N-Channel MOSFET, up to 9.9A, Fairchild Semiconductor
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 5.5 A |
| Maximum Drain Source Voltage | 100 V |
| Package Type | DPAK (TO-252) |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 170 mΩ |
| Channel Mode | Enhancement |
| Minimum Gate Threshold Voltage | 1V |
| Maximum Power Dissipation | 29 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Width | 6.22mm |
| Typical Gate Charge @ Vgs | 3.7 nC @ 10 V |
| Maximum Operating Temperature | +150 °C |
| Number of Elements per Chip | 1 |
| Length | 6.73mm |
| Transistor Material | Si |
| Series | PowerTrench |
| Minimum Operating Temperature | -55 °C |
| Height | 2.39mm |