Dual N/P-Channel-Channel MOSFET, 340 mA, 510 mA, 60 V, 6-Pin SOT-23 onsemi NDC7001C
- RS Stock No.:
- 178-7608
- Mfr. Part No.:
- NDC7001C
- Brand:
- onsemi
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Unfortunately, we don’t have this product in stock and it’s not available to backorder at this time.
Added
Price (ex. GST) Each (On a Reel of 3000)
$0.23
(exc. GST)
$0.25
(inc. GST)
| Units | Per unit | Per Reel* |
| 3000 - 3000 | $0.23 | $690.00 |
| 6000 - 9000 | $0.224 | $672.00 |
| 12000 + | $0.221 | $663.00 |
| *price indicative | ||
- RS Stock No.:
- 178-7608
- Mfr. Part No.:
- NDC7001C
- Brand:
- onsemi
Technical data sheets
Legislation and Compliance
Product Details
Enhancement Mode Dual MOSFET, Fairchild Semiconductor
Enhancement Mode Field Effect Transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
The NDC7001C is a dual N & P-Channel MOSFET that feature ON Semi’s DMOS technology. DMOS ensures fast switching, reliability and on-state resistance. These MOSFETs are a SOT-23 package type featuring 6 pins.
Features and benefits:
• DMOS Technology
• High saturation current
• High density cell design
• Copper lead frame for superior thermal and electrical capabilities
• High saturation current
• High density cell design
• Copper lead frame for superior thermal and electrical capabilities
NDC7001C MOSFETs are ideal for;
• Low voltage
• Low current
• Switching
• Power supplies
• Low current
• Switching
• Power supplies
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Specifications
Attribute | Value |
|---|---|
| Channel Type | N, P |
| Maximum Continuous Drain Current | 340 mA, 510 mA |
| Maximum Drain Source Voltage | 60 V |
| Package Type | SOT-23 |
| Mounting Type | Surface Mount |
| Pin Count | 6 |
| Maximum Drain Source Resistance | 4 Ω, 10 Ω |
| Channel Mode | Enhancement |
| Minimum Gate Threshold Voltage | 1V |
| Maximum Power Dissipation | 960 mW |
| Transistor Configuration | Isolated |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Maximum Operating Temperature | +150 °C |
| Length | 3mm |
| Transistor Material | Si |
| Number of Elements per Chip | 2 |
| Typical Gate Charge @ Vgs | 1.1 nC @ 10 V, 1.6 nC @ 10 V |
| Width | 1.7mm |
| Height | 1mm |
| Minimum Operating Temperature | -55 °C |