Dual N-Channel MOSFET, 3.5 A, 60 V, 8-Pin SOIC onsemi NDS9945

RS Stock No.:: 166-3245
Mfr. Part No.:: NDS9945
Brand:: onsemi

Dual N-Channel MOSFET, 3.5 A, 60 V, 8-Pin SOIC onsemi NDS9945

This image is representative of the product range

On back order for despatch 29/08/2024, delivery within 10 working days from despatch date.

Added

Price (ex. GST) Each (On a Reel of 2500)

$1.275

(exc. GST)

$1.403

(inc. GST)

Units	Per unit	Per Reel*
2500 - 10000	$1.275	$3,187.50
12500 +	$1.148	$2,870.00
*price indicative

RS Stock No.:: 166-3245
Mfr. Part No.:: NDS9945
Brand:: onsemi

Technical data sheets

Legislation and Compliance

Product Details

Enhancement Mode Dual MOSFET, Fairchild Semiconductor

Enhancement Mode Field Effect Transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	3.5 A
Maximum Drain Source Voltage	60 V
Package Type	SOIC
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	300 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	1V
Maximum Power Dissipation	2 W
Transistor Configuration	Isolated
Maximum Gate Source Voltage	-20 V, +20 V
Number of Elements per Chip	2
Width	3.9mm
Typical Gate Charge @ Vgs	12.9 nC @ 10 V
Transistor Material	Si
Length	4.9mm
Maximum Operating Temperature	+150 °C
Forward Diode Voltage	1.2V
Height	1.57mm
Minimum Operating Temperature	-55 °C