Toshiba GT40WR21,Q(O IGBT, 40 A 1800 V, 3-Pin TO-3PN, Through Hole
- RS Stock No.:
- 799-4864
- Mfr. Part No.:
- GT40WR21,Q(O
- Brand:
- Toshiba
18 In AU stock for next working day delivery
47 In Global stock for delivery within 5 working day(s)
Added
Price (ex. GST) Each
$17.27
(exc. GST)
$19.00
(inc. GST)
| Units | Per unit |
| 1 - 19 | $17.27 |
| 20 - 49 | $16.84 |
| 50 - 99 | $16.44 |
| 100 - 249 | $16.05 |
| 250 + | $15.69 |
- RS Stock No.:
- 799-4864
- Mfr. Part No.:
- GT40WR21,Q(O
- Brand:
- Toshiba
Technical data sheets
Legislation and Compliance
- COO (Country of Origin):
- JP
Product Details
IGBT Discretes, Toshiba
IGBT Discretes & Modules, Toshiba
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifications
Attribute | Value |
|---|---|
| Maximum Continuous Collector Current | 40 A |
| Maximum Collector Emitter Voltage | 1800 V |
| Maximum Gate Emitter Voltage | ±25V |
| Maximum Power Dissipation | 375 W |
| Package Type | TO-3PN |
| Mounting Type | Through Hole |
| Channel Type | N |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Dimensions | 15.5 x 4.5 x 20mm |
| Maximum Operating Temperature | +175 °C |