Toshiba GT30J121 IGBT, 30 A 600 V, 3-Pin TO-3P, Through Hole

RS Stock No.:: 796-5058
Mfr. Part No.:: GT30J121
Brand:: Toshiba

Toshiba GT30J121 IGBT, 30 A 600 V, 3-Pin TO-3P, Through Hole

This image is representative of the product range

4 In Global stock for delivery within 5 working day(s)

77 In Global stock for delivery within 10 working day(s)

Added

Price (ex. GST) Each

$6.19

(exc. GST)

$6.81

(inc. GST)

Units	Per unit
1 - 12	$6.19
13 - 24	$6.03
25 +	$5.95

RS Stock No.:: 796-5058
Mfr. Part No.:: GT30J121
Brand:: Toshiba

Technical data sheets

Legislation and Compliance

Product Details

IGBT Discretes, Toshiba

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

IGBT Discretes & Modules, Toshiba

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Specifications

Attribute	Value
Maximum Continuous Collector Current	30 A
Maximum Collector Emitter Voltage	600 V
Maximum Gate Emitter Voltage	±20V
Maximum Power Dissipation	170 W
Package Type	TO-3P
Mounting Type	Through Hole
Channel Type	N
Pin Count	3
Switching Speed	1MHz
Transistor Configuration	Single
Dimensions	15.9 x 4.8 x 20mm
Maximum Operating Temperature	+150 °C