onsemi FGAF40S65AQ IGBT, 80 A 650 V, 3-Pin TO-3PF, Through Hole
- RS Stock No.:
- 185-8956
- Mfr. Part No.:
- FGAF40S65AQ
- Brand:
- onsemi
801 In Global stock for delivery within 10 working day(s)
Added
Price (ex. GST) Each (In a Pack of 3)
$5.83
(exc. GST)
$6.41
(inc. GST)
| Units | Per unit | Per Pack* |
| 3 - 87 | $5.83 | $17.49 |
| 90 - 177 | $5.693 | $17.079 |
| 180 + | $5.61 | $16.83 |
| *price indicative | ||
- RS Stock No.:
- 185-8956
- Mfr. Part No.:
- FGAF40S65AQ
- Brand:
- onsemi
Technical data sheets
Legislation and Compliance
Non Compliant
- COO (Country of Origin):
- KR
Product Details
Using novel field stop IGBT technology, ON semiconductor’s new series of field stop 4th generation of RC IGBTs offer the optimum performance for converter PFC stage of consummer and industrial applications.
Maximum junction temperature : TJ = 175°C
Positive temperaure co-efficient for easy parallel operating
High current capability
Low saturation voltage: VCE(sat) = 1.6V(Typ.) @ IC = 40A
High input impedance
100% of the Parts tested for ILM
Fast switching
Tightened parameter distribution
IGBT with monolithic reverse conducting diode
Applications
Consumer Appliances
PFC, Welder
Industrial application
Positive temperaure co-efficient for easy parallel operating
High current capability
Low saturation voltage: VCE(sat) = 1.6V(Typ.) @ IC = 40A
High input impedance
100% of the Parts tested for ILM
Fast switching
Tightened parameter distribution
IGBT with monolithic reverse conducting diode
Applications
Consumer Appliances
PFC, Welder
Industrial application
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
Specifications
Attribute | Value |
|---|---|
| Maximum Continuous Collector Current | 80 A |
| Maximum Collector Emitter Voltage | 650 V |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Power Dissipation | 94 W |
| Number of Transistors | 1 |
| Package Type | TO-3PF |
| Mounting Type | Through Hole |
| Channel Type | N |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Dimensions | 15.7 x 5.7 x 24.7mm |
| Energy Rating | 325mJ |
| Maximum Operating Temperature | +175 °C |
| Gate Capacitance | 2590pF |
| Minimum Operating Temperature | -55 °C |