onsemi HGTG30N60A4 IGBT, 75 A 600 V, 3-Pin TO-247, Through Hole

RS Stock No.:: 124-1304
Mfr. Part No.:: HGTG30N60A4
Brand:: onsemi

onsemi HGTG30N60A4 IGBT, 75 A 600 V, 3-Pin TO-247, Through Hole

This image is representative of the product range

Available for back order.

Added

Price (ex. GST) Each (In a Tube of 30)

$10.592

(exc. GST)

$11.651

(inc. GST)

Units	Per unit	Per Tube*
30 - 30	$10.592	$317.76
60 - 90	$10.332	$309.96
120 +	$10.168	$305.04
*price indicative

RS Stock No.:: 124-1304
Mfr. Part No.:: HGTG30N60A4
Brand:: onsemi

Technical data sheets

Legislation and Compliance

Product Details

Discrete IGBTs, Fairchild Semiconductor

IGBT Discretes & Modules, Fairchild Semiconductor

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Specifications

Attribute	Value
Maximum Continuous Collector Current	75 A
Maximum Collector Emitter Voltage	600 V
Maximum Gate Emitter Voltage	±20V
Package Type	TO-247
Mounting Type	Through Hole
Channel Type	N
Pin Count	3
Transistor Configuration	Single
Dimensions	15.87 x 4.82 x 20.82mm
Minimum Operating Temperature	-55 °C
Maximum Operating Temperature	+150 °C