Infineon FP35R12KT4B11BOSA1 3 Phase Bridge IGBT Module, 35 A 1200 V, 23-Pin Econo2, PCB Mount
- RS Stock No.:
- 124-8795
- Mfr. Part No.:
- FP35R12KT4B11BOSA1
- Brand:
- Infineon
On back order for despatch 25/06/2025, delivery within 10 working days from despatch date.
Added
Price (ex. GST) Each (In a Box of 10)
$153.153
(exc. GST)
$168.468
(inc. GST)
| Units | Per unit | Per Box* |
| 10 - 10 | $153.153 | $1,531.53 |
| 20 - 30 | $152.405 | $1,524.05 |
| 40 + | $147.026 | $1,470.26 |
| *price indicative | ||
- RS Stock No.:
- 124-8795
- Mfr. Part No.:
- FP35R12KT4B11BOSA1
- Brand:
- Infineon
Technical data sheets
Legislation and Compliance
- COO (Country of Origin):
- CN
Product Details
IGBT Modules, Infineon
The Infineon range of IGBT Modules offer low switching loss for switching up to 60 Khz frequencies.
The IGBTs span over a range of power modules like the ECONOPACK packages with collector emitter voltage at 1200V, PrimePACK IGBT half-bridge chopper modules with NTC up to 1600/1700V. The PrimePACK IGBT’s can be found in Industrial, commercial, construction and agricultural vehicles. The N-Channel TRENCHSTOP TM and Fieldstop IGBT Modules are suitable for hard switching and soft switching applications such as Inverters, UPS and Industrial drives.
The IGBTs span over a range of power modules like the ECONOPACK packages with collector emitter voltage at 1200V, PrimePACK IGBT half-bridge chopper modules with NTC up to 1600/1700V. The PrimePACK IGBT’s can be found in Industrial, commercial, construction and agricultural vehicles. The N-Channel TRENCHSTOP TM and Fieldstop IGBT Modules are suitable for hard switching and soft switching applications such as Inverters, UPS and Industrial drives.
Package styles include: 62mm Modules, EasyPACK, EconoPACKTM2/EconoPACKTM3/EconoPACKTM4
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifications
Attribute | Value |
|---|---|
| Maximum Continuous Collector Current | 35 A |
| Maximum Collector Emitter Voltage | 1200 V |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Power Dissipation | 210 W |
| Package Type | Econo2 |
| Configuration | 3 Phase Bridge |
| Mounting Type | PCB Mount |
| Channel Type | N |
| Pin Count | 23 |
| Switching Speed | 1MHz |
| Transistor Configuration | 3 Phase |
| Dimensions | 107.5 x 45 x 17mm |
| Minimum Operating Temperature | -40 °C |
| Maximum Operating Temperature | +150 °C |