IXYS MWI200-06A8 3 Phase Bridge IGBT Module, 225 A 600 V, 21-Pin, PCB Mount
- RS Stock No.:
- 194-912
- Mfr. Part No.:
- MWI200-06A8
- Brand:
- IXYS
Discontinued product
- RS Stock No.:
- 194-912
- Mfr. Part No.:
- MWI200-06A8
- Brand:
- IXYS
Technical data sheets
Legislation and Compliance
Product Details
IGBT Modules, IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifications
Attribute | Value |
|---|---|
| Maximum Continuous Collector Current | 225 A |
| Maximum Collector Emitter Voltage | 600 V |
| Maximum Gate Emitter Voltage | ±20V |
| Configuration | 3 Phase Bridge |
| Mounting Type | PCB Mount |
| Channel Type | N |
| Pin Count | 21 |
| Transistor Configuration | 3 Phase |
| Dimensions | 122 x 62 x 17mm |
| Minimum Operating Temperature | -40 °C |
| Maximum Operating Temperature | +125 °C |